BRAND | Infineon |
Product | BSM50GX120DN2 |
Description | IGBT Modules |
Internal code | IMP4356305 |
Technical specification | Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 2.5 V Continuous Collector Current at 25 C: 78 A Gate-Emitter Leakage Current: 200 nA Pd - Power Dissipation: 400 W Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C |
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ALLOCATION
temperature sensor
controller
temperature sensor
Phase Control Thyristor discs
Infineon IGBT Modules
Discrete Semiconductor Modules
Diskrete Halbleitermodule
power switch
Power Switch
ELEMENT
IGBT Silicon Modules
Diode Module with Chopper-IGBT
IGBT Silicon Modules
IGBT Module
Package Info**: PG-TO262-3 Tube
Diode