BSM10GD120DN2 - Infineon Suomi Sales

BRAND	Infineon
Product	BSM10GD120DN2
Description	Transistor
Internal code	IMP532962
Weight	1
Technical specification	Configuration: Full Bridge Max. VCEO collector-emitter voltage: 1200 V Collector-Emitter Saturation Voltage: 2.7 V DC Collector at 25 C: 15 A Door-emitter leakage current: 120 nA Dp - Power Dissipation: 80 W Package/Cover: EconoPack 2 Minimum working temperature: - 40 C Maximum working temperature: + 150 C Packaging: Tray Brand: Infineon Technologies Height: 17 mm Length: 107.5 mm Maximum gate-emitter voltage: 20 V Mounting Style: Chassis Mount Product Type: IGBT Modules Subcategory: IGBTs Technology: Yes Width: 45.5 mm Alias of the parts No.: SP000100367 BSM10GD120DN2BOSA1 Unit weight: 180 g

Please Contact Us to Order to offer competitive prices and delivery time for Infineon - BSM10GD120DN2 Transistor number, also you may ask some other model number is well. We can offer competitive price, and delivery time with wide products distribution network in Suomi Industrial products Market.

WE SELL ONLY NEW AND ORIGINAL PRODUCTS!

Our company is not an authorized distributor. All rights are reserved by the manufacturers and their official partners.